Features
- Low collector to emitter saturation voltage VCE(sat) = 1.5V typ. (at IC = 200A, VGE = 15V, TC = 25 °C)
- High-speed switching
- Short circuit withstands time (10μs min.)
Description
The RJP65S08DWA 650V, 200A insulated-gate bipolar transistor (IGBT) offers high-speed switching, low collector to emitter saturation voltage, and is available in an Unsawn wafer package type.
Applications
- Inverters
Applied Filters:
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