Features
- Renesas generation 7th Trench IGBT
- Low collector to emitter saturation voltage VCE(sat) = 1.55V typ. (at IC = 75A, VGE = 15V, Tc = 25 °C)
- Moderate speed switching
- Short circuit withstands time (10μs min.)
Description
The RJP1CS25DWA 1250V, 75A, insulated-gate bipolar transistor (IGBT) offers a low collector to emitter saturation voltage and can be used for inverter applications. It is available in an Unsawn wafer package type.
Applications
- Inverters
Applied Filters:
Loading