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Features

  • Renesas generation 7th Trench IGBT
  • Low collector to emitter saturation voltage VCE(sat) = 1.55V typ. (at IC = 50A, VGE = 15V, Tc = 25 °C)
  • Moderate speed switching
  • Short circuit withstands time (10μs min.)

Description

The RJP1CS24DWA 1250V, 50A, trench insulated-gate bipolar transistor (IGBT) offers a low collector to emitter saturation voltage and can be used for inverter applications. It is available in an Unsawn wafer package type.

Applications

  • Inverters
Part NumberStatusSamplesStockRoHSPackagePb (Lead) Free
RJP1CS24DWA-80#W0ObsoleteN/AOut of StockRoHS:EN
RoHS:JA
WaferNo
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