Features
- Low collector to emitter saturation voltage VCE(sat) = 1.8V typ. (at IC = 30A, VGE = 15V, Tc = 25 °C)
- High-Speed switching
- Short circuit withstands time (10μs min.)
Description
The RJP1CS03DWA 1250V, 30A insulated-gate bipolar transistor (IGBT) offers a low collector to emitter saturation voltage and can be used for inverter applications. It is available in an Unsawn wafer package type.
Applications
- Inverters
Applied Filters:
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