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RJH65T46DPQ-A0

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IGBT 650V 40A TO-247A Built-In FRD

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Overview

The RJH65T46DPQ-A0 650V, 40A trench insulated-gate bipolar transistor (IGBT) offers a low collector to emitter saturation voltage, built-in fast recovery diode (FRD), and can be used for power factor correction (PFC) circuit applications. It is available in a TO-247A package type.

  • Low collector to emitter saturation voltage VCE(sat) = 1.8V typ. (at IC = 40A, VGE = 15V, Ta = 25 °C)
  • Built-in fast recovery diode in one package
  • Trench gate and thin wafer technology (G7H series)
  • High-Speed switching tf = 45ns typ. (at VCC = 400V, VGE = 15V , IC = 40A, Rg = 10Ω, Ta = 25 °C, Inductive load)
  • Operation frequency (20kHz ≤ f ˂ 100kHz)
  • Not guarantee short circuit withstand time

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