Features
- Logic level operation (4V gate drive)
- Built-in overtemperature shut-down circuit and current limitation circuit
- High endurance capability against short circuit
- Temperature hysteresis type
- High-density mounting
- Built-in current limitation circuit
- Power supply voltage applies 12V and 24V
- AEC-Q101 Rev-E compliant
Description
This FET has overtemperature shut-down capability sensing for junction temperature. This FET also has a built-in overtemperature shut-down circuit in the gate area, and circuit operation to shut down the gate voltage in case of high junction temperature caused by excessive power consumption, overcurrent, etc.
Parameters
| Attributes | Value |
|---|---|
| Qualification Level | Automotive |
| Nch/Pch | Nch |
| Channels (#) | 1 |
| Standard Pkg. Type | SO8-FL 5x6 BSC |
| Gate Level | Logic |
| VDSS (Max) (V) | 60 |
| ID (A) | 10 |
| RDS (ON) (Max) @10V (mohm) | 75 |
| RDS (ON) (Max) @4.5V (mohm) | 100 |
| Pch (W) | 40 |
| Series Name | Thermal FETs |
Package Options
| Pkg. Type | Pkg. Dimensions (mm) | Lead Count (#) |
|---|---|---|
| HSON | 5.4 x 5 x 1.45 | 8 |
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