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Renesas Electronics Corporation

Features

  • Logic level operation (4V gate drive)
  • Built-in overtemperature shut-down circuit and current limitation circuit
  • High endurance capability against short circuit
  • Temperature hysteresis type
  • High-density mounting
  • Built-in current limitation circuit
  • Power supply voltage applies 12V and 24V
  • AEC-Q101 Rev-E compliant

Description

This FET has overtemperature shut-down capability sensing for junction temperature. This FET also has a built-in overtemperature shut-down circuit in the gate area, and circuit operation to shut down the gate voltage in case of high junction temperature caused by excessive power consumption, overcurrent, etc.

Parameters

AttributesValue
Qualification LevelAutomotive
Nch/PchNch
Channels (#)2
Standard Pkg. TypeSO8-FL 5x6 BSC
Gate LevelLogic
VDSS (Max) (V)60
ID (A)7
RDS (ON) (Max) @10V (mohm)80
RDS (ON) (Max) @4.5V (mohm)100
Pch (W)30
Series NameThermal FETs

Package Options

Pkg. TypePkg. Dimensions (mm)Lead Count (#)
HSON5.4 x 5 x 1.458

Application Block Diagrams

Humanoid battery management system block diagram features cell balancing and monitoring, charge and discharge protection, pack voltage and current sensing, battery pack control, communications, auxiliary power, and active cooling.
Humanoid Battery Management System
Integrated humanoid robot BMS enabling safe, real-time power management, protection, and battery-state control.

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