Skip to main content

Features

  • Super low on-state resistance
    • RDS(on) = 0.85 mΩ MAX. (VGS = 10 V, ID = 125A)
  • Low input capacitance
    • Ciss = 12900pF TYP. (VDS = 25 V)
  • Designed for automotive application and AEC-Q101 qualified
  • Pb-free (This product does not contain Pb in the external electrode)

Description

The RBA250N04AHPF-4UA01 is an N-channel Metal Oxide Semiconductor Field Effect Transistor (MOSFET) designed for high current switching applications.

Parameters

Attributes Value
Qualification Level Automotive
Nch/Pch Nch
Channels (#) 1
Standard Pkg. Type TO-263-7 / D2PAK-7
VDSS (Max) (V) 40
ID (A) 250
RDS (ON) (Max) @10V or 8V (mohm) 0.85
RDS (ON) (Typical) @ 10V / 8V (mohm) 0.72
Pch (W) 348
Vgs (off) (Max) (V) 4
VGSS (V) 20
Ciss (Typical) (pF) 12900
Qg typ (nC) 245
Mounting Type Surface Mount

Package Options

Pkg. Type Pkg. Dimensions (mm) Lead Count (#)
MP-25ZU 10 x 9 x 4.65 7

Application Block Diagrams

Electric Power Steering System Block Diagram
Electric Power Steering System
Renesas provides ASIL-D certified products, such as PMICs and MCUs for electric power steering systems.

Applied Filters: