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150V, 200A, 3.4mΩ N‑Channel Automotive REXFET‑1 Power MOSFET in TOLL Package

Package Information

CAD Model:View CAD Model
Pkg. Type:TOLL
Pkg. Code:
Lead Count (#):8
Pkg. Dimensions (mm):9.90 x 11.68 x 2.30
Pitch (mm):

Environmental & Export Classifications

Moisture Sensitivity Level (MSL)1
Pb (Lead) FreeYes
ECCN (US)
HTS (US)8541.29.0095
RoHS (RBA200N15YANS-3UA03#GB0)EnglishJapanese

Product Attributes

Pkg. TypeTOLL
Lead Count (#)8
Carrier TypeEmbossed Tape
Moisture Sensitivity Level (MSL)1
Pb (Lead) FreeYes
Channels (#)1
Ciss (Typical) (pF)6200
Country of AssemblyCHINA
Country of Wafer FabricationCHINA
FunctionPower MOSFETs
Gate LevelStandard
ID (A)200
Id max @ 25°C (A)200
Lead CompliantNo
Length (mm)11.68
MOQ2000
Mounting TypeSurface Mount
Nch/PchNch
Pch (W)366
Pkg. Dimensions (mm)9.90 x 11.68 x 2.30
Price (USD)$4.63284
Qg typ (nC)86
Qualification LevelAutomotive
RDS (ON) (Max) @10V (mohm)3.4
RDS (ON) (Typical) @ 10V / 8V (mohm)2.8
Series NameREXFET-1
Simulation Model AvailableYes
Standard Pkg. TypeTOLL
Tape & ReelYes
Thickness (mm)2.3
VDSS (Max) (V)150
VGSS (V)20
Vgs (off) (Max) (V)3.7
Width (mm)9.9

Description

The RBA200N15YANS-3UA03 n‑channel power MOSFET features REXFET-1 split-gate technology and is available in a TOLL package. The TOLL package features compact, leadless designs with wettable flanks to support enhanced thermal performance, reliability, and ease of assembly.

Renesas' REXFET-1 split-gate technology is well-suited for applications that require low RDS(on) and high switching performance, making it ideal for high-power and high-frequency applications.