Features
- VDSS = 150V
- Standard-level gate drive voltage: VGS(th) = 2.2V to 3.7V
- Super low on-state resistance: RDS(on) = 3.4mΩ max.
- ID(DC) = 200A
- Low input capacitance
- Low thermal resistance
- 100% avalanche tested
- AEC-Q101 qualified
- Production Part Approval Process (PPAP) capable
- Pb-free lead plating: RoHS compliant
- MSL1 classified according to IPC/JEDEC J-STD-020
Description
The RBA200N15YANS-3UA03 N‑channel Power MOSFET features REXFET-1 split-gate technology and is available in a TOLL package. The TOLL package features compact, leadless designs with wettable flanks to support enhanced thermal performance, reliability, and ease of assembly.
Renesas' REXFET-1 split-gate technology is well-suited for applications that require low RDS(on) and high switching performance, making it ideal for high-power and high-frequency applications.
Parameters
| Attributes | Value |
|---|---|
| Qualification Level | Automotive |
| Nch/Pch | Nch |
| Channels (#) | 1 |
| Standard Pkg. Type | TOLL |
| Gate Level | Standard |
| VDSS (Max) (V) | 150 |
| ID (A) | 200 |
| RDS (ON) (Max) @10V (mohm) | 3.4 |
| Pch (W) | 366 |
| Ciss (Typical) (pF) | 6200 |
| Qg typ (nC) | 86 |
| Series Name | REXFET-1 |
Package Options
| Pkg. Type | Pkg. Dimensions (mm) | Lead Count (#) |
|---|---|---|
| TOLL | 9.90 x 11.68 x 2.30 | 8 |
Applications
- 72V to 96V Battery System and Motor Drive
- Small Traction (2-Wheel and 3-Wheel Vehicle)
- Onboard Charger (OBC)
- Charging Station
- Low Voltage DC/DC