Features
- VDSS = 150V
- Standard-level gate drive voltage: VGS(th) = 2.2V to 3.7V
- Super low on-state resistance: RDS(on) = 3.9mΩ max.
- ID(DC) = 190A
- Low input capacitance
- Low thermal resistance
- 100% avalanche tested
- AEC-Q101 qualified
- Production Part Approval Process (PPAP) capable
- Pb-free lead plating: RoHS compliant
- MSL1 classified according to IPC/JEDEC J-STD-020
Description
The RBA190N15YANS-3UA04 n‑channel power MOSFET features REXFET-1 split-gate technology and is available in a TOLL package. The TOLL package features compact, leadless designs with wettable flanks to support enhanced thermal performance, reliability, and ease of assembly.
Renesas' REXFET‑1 split‑gate technology is well‑suited for applications that require low RDS(on) and high switching performance, making it ideal for high‑power and high‑frequency applications.
Parameters
| Attributes | Value |
|---|---|
| Qualification Level | Automotive |
| Nch/Pch | Nch |
| Channels (#) | 1 |
| Standard Pkg. Type | TOLL |
| Gate Level | Standard |
| VDSS (Max) (V) | 150 |
| ID (A) | 190 |
| RDS (ON) (Max) @10V (mohm) | 3.9 |
| Pch (W) | 319 |
| Ciss (Typical) (pF) | 5500 |
| Qg typ (nC) | 76 |
| Series Name | REXFET-1 |
Package Options
| Pkg. Type | Pkg. Dimensions (mm) | Lead Count (#) |
|---|---|---|
| TOLL | 9.90 x 11.68 x 2.30 | 8 |
Applications
- 72V to 96V Battery System and Motor Drive
- Small Traction (2-Wheel, 3-Wheel Vehicle)
- Onboard Charger (OBC)
- Charging Station
- Low Voltage DC/DC