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Features

  • Single supply: 3.3V ± 0.3V
  • Access time: 10ns /12ns (max)
  • Completely static memory: No clock or timing strobe required
  • Equal access and cycle times
  • Directly TTL compatible: All inputs and outputs
  • Operating current: 115mA/100mA (max)
  • TTL standby current: 40mA (max)
  • CMOS standby current: 5mA (max), 0.8 mA (max) (L-version)
  • Data retention current: 0.4mA (max) (L-version)
  • Data retention voltage: 2V (min) (L-version)
  • Center VCC and VSS type pinout

Description

The R1RW0408D is a 4Mbit high-speed static RAM organized as 512-kword × 8-bit. It realizes high-speed access time by employing the CMOS process (6-transistor memory cell) and high-speed circuit design technology. It is most appropriate for applications that require high-speed, high-density memory and a wide bit width configuration, such as cache and buffer memory in systems. The R1RW0408D is packaged in 400-mil 36-pin SOJ for high-density surface mounting.

Part NumberStatusSamplesStockRoHSPackageBudgetary Price (USD)Carrier TypeMoisture Sensitivity Level (MSL)Country of AssemblyCountry of Wafer Fabrication
R1RW0408DGE-2LR#B0ObsoleteN/AIn StockRoHS:EN
RoHS:JA
SOJTube2
R1RW0408DGE-2LR#B1Last Time BuyN/AIn StockContactSOJ1ku | $10.11Tube3TAIWANJAPAN
R1RW0408DGE-2PR#B0ObsoleteN/AIn StockRoHS:EN
RoHS:JA
SOJTube2
R1RW0408DGE-2PR#B1Last Time BuyN/AIn StockContactSOJ1ku | $10.11Tube3TAIWANJAPAN
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