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2Mb Advanced LPSRAM (128k word x 16-bit)

Package Information

CAD Model:View CAD Model
Pkg. Type:TSOP(2)
Pkg. Code:pkg_1574
Lead Count (#):44
Pkg. Dimensions (mm):18 x 10 x 1.2
Pitch (mm):

Environmental & Export Classifications

Moisture Sensitivity Level (MSL)3
ECCN (US)3A991.b.2.a
HTS (US)8542.32.0041
RoHS (R1LV0216BSB-5SI#S0)EnglishJapanese
Pb (Lead) FreeYes

Product Attributes

Carrier TypeEmbossed Tape
Moisture Sensitivity Level (MSL)3
Access Time (ns)55
Density (Kb)2000
Lead CompliantYes
Lead Count (#)44
Length (mm)18
MOQ1000
Memory Capacity (kbit)2000
Memory Density2
Organization128K x 16
Organization (bit)x 16
Organization (kword)128
Pb (Lead) FreeYes
Pkg. Dimensions (mm)18 x 10 x 1.2
Pkg. TypeTSOP(2)
Price (USD)$6.14284
RemarksSingle Chip Select (CS#)
Replacement ProductR1LV0216BSB-5SI#S1
Supply Voltage (V)2.7 - 3.6
Tape & ReelNo
Temp. Range (°C)-40 to +85
Thickness (mm)1.2
Width (mm)10

Description

The R1LV0216BSB is a low-voltage 2-Mbit static RAM organized as 131, 072-word by 16-bit, fabricated by Renesas' high-performance 0.15µm CMOS and TFT technologies. The R1LV0216BSB realizes higher density, higher performance, and low-power consumption. The device is suitable for memory applications where simple interfacing, battery operation, and battery backup are the important design objectives. The R1LV0216BSB is packaged in a 44-pin TSOP.