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Features

  • Single 2.7V ~ 3.6V power supply
  • Small stand-by current: 1µA (3.0V, typical)
  • No clocks, No refresh
  • All inputs and outputs are TTL compatible.
  • Easy memory expansion by CS#, LB#, and UB#
  • Common Data I/O
  • Three-state outputs: OR-tie capability
  • OE# prevents data contention on the I/O bus

Description

The R1LV0216BSB is a low-voltage 2-Mbit static RAM organized as 131, 072-word by 16-bit, fabricated by Renesas' high-performance 0.15µm CMOS and TFT technologies. The R1LV0216BSB realizes higher density, higher performance, and low-power consumption. The device is suitable for memory applications where simple interfacing, battery operation, and battery backup are the important design objectives. The R1LV0216BSB is packaged in a 44-pin TSOP.

Parameters

AttributesValue
Memory Density2
Organization128K x 16
Access Time (ns)55
Supply Voltage (V)2.7 - 3.6
Temp. Range (°C)-40 to +85

Package Options

Pkg. TypePkg. Dimensions (mm)Lead Count (#)Pitch (mm)
TSOP(44)18 x 10 x 1.2440.8
Part NumberStatusSamplesStockRoHSPackageBudgetary Price (USD)Carrier TypeMoisture Sensitivity Level (MSL)Country of AssemblyCountry of Wafer Fabrication
R1LV0216BSB-5SI#B1ActiveAvailableIn StockContactTSOP(2)1ku | $5.55Tray3MALAYSIA, TAIWANJAPAN
R1LV0216BSB-5SI#S1ActiveN/AIn StockContactTSOP(2)1ku | $4.4Embossed Tape3MALAYSIA, TAIWANJAPAN
R1LV0216BSB-5SI#B0ObsoleteN/AOut of StockRoHS:EN
RoHS:JA
TSOP(2)Tray3
R1LV0216BSB-5SI#S0ObsoleteN/AOut of StockRoHS:EN
RoHS:JA
TSOP(2)Embossed Tape3
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