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2Mb Advanced LPSRAM (256k word x 8bit)

Package Information

CAD Model:View CAD Model
Pkg. Type:sTSOP(32)
Pkg. Code:pkg_11617
Lead Count (#):32
Pkg. Dimensions (mm):12 x 8 x 1.2
Pitch (mm):0.5

Environmental & Export Classifications

Moisture Sensitivity Level (MSL)3
ECCN (US)3A991.b.2.a
HTS (US)8542.32.0041
Pb (Lead) FreeYes

Product Attributes

Carrier TypeEmbossed Tape
Moisture Sensitivity Level (MSL)3
Country of AssemblyMALAYSIA, TAIWAN
Country of Wafer FabricationJAPAN
Access Time (ns)55
Density (Kb)2000
Lead CompliantYes
Lead Count (#)32
Length (mm)12
MOQ1000
Memory Capacity (kbit)2000
Memory Density2
Organization256K x 8
Organization (bit)x 8
Organization (kword)256
Pb (Lead) FreeYes
Pkg. Dimensions (mm)12 x 8 x 1.2
Pkg. TypesTSOP(32)
Price (USD)$2.64743
RemarksDual Chip Select (CS1#, CS2)
Replacement Remarkconsolidation of part-names and/or assembly material change
Supply Voltage (V)2.7 - 3.6
Tape & ReelNo
Temp. Range (°C)-40 to +85
Thickness (mm)1.2
Width (mm)8

Description

The R1LV0208BSA is a low-voltage, 2-Mbit static RAM organized as 262, 144-word by 8-bit, fabricated by Renesas' high-performance 0.15µm CMOS and TFT technologies. The R1LV0208BSA realizes higher density, higher performance, and low-power consumption. The device is suitable for memory applications where simple interfacing, battery operation, and battery backup are the important design objectives. The R1LV0208BSA is packaged in a 32-pin sTSOP.