Skip to main content
Renesas Electronics Corporation - June is Pride Month, a month to raise awareness of the rights and the culture of the LGBTQ+ community

Features

  • Optical output power: PO = 8.5 mW
  • Low threshold current: Ith = 7 mA
  • Differential efficiency: ηd = 0.35 W/A
  • Wide operating temperature range: TC = −40 to +85°C
  • InGaAs monitor PIN-PD
  • CAN package: φ 5.6 mm
  • Focal point: 6.2 mm

Description

The NX6353EP series is a 1 270/1 290/1 310/1 330/1 350 nm Multiple Quantum Well (MQW) structured Distributed Feed-Back (DFB) laser diode with InGaAs monitor PIN-PD.

Part NumberStatusSamplesStockRoHSPackage
NX6353EP27-AZObsoleteN/AOut of StockRoHS:EN
RoHS:JA
Package
NX6353EP29-AZObsoleteN/AOut of StockRoHS:EN
RoHS:JA
Package
NX6353EP31-AZObsoleteN/AOut of StockRoHS:EN
RoHS:JA
Package
NX6353EP33-AZObsoleteN/AOut of StockRoHS:EN
RoHS:JA
Package
NX6353EP35-AZObsoleteN/AOut of StockRoHS:EN
RoHS:JA
Package
Support Communities

Support Communities

Get quick technical support online from Renesas Engineering Community technical staff.
Browse Articles

Knowledge Base

Browse our knowledge base for helpful articles, FAQs, and other useful resources.
Submit a Ticket

Submit a Ticket

Need to ask a technical question or share confidential information?