Features
- Low on-state resistance RDS(on) = 9.7 mΩ MAX. (VGS = 10 V, ID = 17.5 A) RDS(on) = 15 mΩ MAX. (VGS = 5 V, ID = 17.5 A)
- Logic level drive type
- Gate to Source ESD protection diode built in
- Designed for automotive application and AEC-Q101 qualified
Description
The NP35N04YLG is N-channel MOS Field Effect Transistor designed for high current switching applications.
Parameters
| Attributes | Value |
|---|---|
| Qualification Level | Automotive |
| Nch/Pch | Nch |
| Channels (#) | 1 |
| Standard Pkg. Type | Power SON-8 5x6 |
| VDSS (Max) (V) | 40 |
| ID (A) | 35 |
| RDS (ON) (Max) @10V or 8V (mohm) | 9.7 |
| RDS (ON) (Typical) @ 10V / 8V (mohm) | 7.8 |
| Pch (W) | 77 |
| Vgs (off) (Max) (V) | 2.5 |
| VGSS (V) | 20 |
| Ciss (Typical) (pF) | 1900 |
| Qg typ (nC) | 34 |
| Mounting Type | Surface Mount |
Package Options
| Pkg. Type | Pkg. Dimensions (mm) | Lead Count (#) |
|---|---|---|
| HSON | 5 x 5 x 1.45 | 8 |
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