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Features

  • Super low on-state resistance RDS(on)1 = 40 mΩ MAX. (VGS = −10 V, ID = −7.5 A) RDS(on)2 = 60 mΩ MAX. (VGS = −4.5 V, ID = −7.5 A)
  • Low input capacitance Ciss = 1100 pF TYP.
  • Built-in gate protection diode

Description

The NP15P04SLG is P-channel MOS Field Effect Transistor designed for high current switching applications.

Parameters

Attributes Value
Qualification Level Automotive
Nch/Pch Pch
Channels (#) 1
Standard Pkg. Type TO-252 / DPAK
VDSS (Max) (V) -40
ID (A) -15
RDS (ON) (Max) @10V or 8V (mohm) 40
RDS (ON) (Max) @ 4V or 4.5V or 5V (m ohm) 60
RDS (ON) (Typical) @ 10V / 8V (mohm) 31
Pch (W) 30
Vgs (off) (Max) (V) -2.5
VGSS (V) 20
Ciss (Typical) (pF) 1100
Qg typ (nC) 23
Mounting Type Surface Mount

Package Options

Pkg. Type Pkg. Dimensions (mm) Lead Count (#)
MP-3ZK 6 x 6 x 2.65 3

Application Block Diagrams

Motor Generator System Block Diagram
Motor Generator System
High-performance xEV motor control design with ASIL C support, lock-step CPUs, and reduced BOM cost.

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