Features
- Includes controllable Dual R/W SRAM buffers for maximum flexibility
- Standard block architecture with added 256-byte page erase for energy efficient Data Logging
- Byte-write provides Serial EEPROM functionality in a Serial NOR Flash device
- Extended Vcc operation allows the system memory to operate over the entire voltage range
- Ultra-deep power down
- Comprehensive security and unique ID features protect the device from outside tampering
Description
The AT45DB641E DataFlash is a member of our System Enhancing class of code and data storage solutions designed with an advanced dual SRAM buffer architecture that makes it the most efficient memory for data logging. It also incorporates a suite of advanced features that save system power, reduce processor overhead, simplify software development, and provide comprehensive data security and integrity options.
Parameters
| Attributes | Value |
|---|---|
| Memory Class | DataFlash |
| Memory Density | 64 Mbit |
| Operating Voltage Range (V) | - |
| Speed | 85 MHz |
| Interface | Single SPI |
| Temp. Range (°C) | -40 to +85°C |
| Deep Power Down (µA) | 0.4 |
| Read Current (mA) | 7 |
| Key Benefit | Includes controllable SRAM |
Package Options
| Pkg. Type | Pkg. Dimensions (mm) | Pitch (mm) |
|---|---|---|
| DFN | 5 x 6 | 1.27 |
| DFN | 6 x 8 | 0.5 |
| SOIC-W | 5.18 x 7.70 | 1.27 |
| WLCSP | — | — |
| WLCSP - Contact Adesto | — | — |