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ISL71441SLH

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Radiation Hardened 12V Half-Bridge GaN FET Driver

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Features

  • Qualified to Renesas Rad Hard Plastic Production and QCI Flow (R34ZZ0006EU)
    • All screening and QCI is in accordance with SAE AS6294/1
  • Up to 20V bootstrap voltage half-bridge driver
  • Programmable 4.5V to 5.5V gate drive voltage
  • Single tri-level PWM input control
  • Separate source and sink driver outputs
  • High-side peak drive: 2A Sourcing, 4A Sinking
  • Low-side peak drive: 4A Sourcing, 8A Sinking
  • High and low-side programmable dead time control
  • Highly matched fast propagation delay: 29ns
  • Full military temperature operation: TA = -55°C to 125°C ambient range
  • 20Ld plastic 5mm x 5mm QFN package
  • TID Rad Hard Assurance (RHA) testing
    • LDR (0.01rad(Si)/s): 75krad(Si)
  • SEE characterization
    • No DSEE with VDD = 20V, PHS = 13.5V, PVCC = 6.5V, and AVCC = 6.3V at LET = 86MeV•cm2/mg
    • SEFI <10µm2 at LET = 86MeV•cm2/mg
  • No half bridge shoot-through SET at LET = 86MeV•cm2/mg
Find Other Products in Hi-Rel GaN FET Drivers
ISL71441SLH Block Diagram

Description

The ISL71441SLH is a radiation hardened PWM input 12V half-bridge GaN FET driver that drives low rDS(ON) Gallium Nitride (GaN) FETs for DC/DC switching regulators. An integrated programmable GaN FET gate drive voltage, high-side bootstrap switch, and strong gate drive current provide a compact and robust GaN FET half-bridge driver.

The ISL71441SLH can interface directly to the ISL73847SLH dual-phase PWM buck controller to create a high-efficiency point-of-load regulator to power many of the latest low-voltage high-current FPGA and DSP digital core rails.

Parameters

Attributes Value
Rating Space
Bus Voltage (Max) (V) 12
Driver Type Half Bridge
FET Type GaNFET
High Side Rise Time (max) (ns) 25
High Side Fall Time (max) (ns) 25
Input VCC (Min) (V) 4.75
Input VCC (Max) (V) 13.2
Low Side Rise Time (max) (ns) 34
Low Side Fall Time (max) (ns) 30
Drivers (#) 2
Output Type Synchronous
Peak Output Source Current (A) 2 (HS) /4 (LS)
Peak Output Sink Current (A) 4 (HS) /8 (LS)
Gate Drive (V) 4.5
Temp. Range (°C) -55 to +125°C
TID LDR (krad(Si)) 75
DSEE (MeV·cm2/mg) 86
Flow RH Plastic
Qualification Level PEMS
Die Sale Availability? No
PROTO Availability? No

Package Options

Pkg. Type Pkg. Dimensions (mm) Lead Count (#) Pitch (mm)
QFN 5.0 x 5.0 x 0.90 20 0.7

Applications

  • High-current DC/DC Point-of-Load (POL) for FPGA and DSP supply rails
  • 5V or 12V input to 1V output POL regulation
  • GaN FET motor driver
  • Combine with ISL73847SLH DC/DC PWM controller and Renesas GaN FETs for a complete DC/DC solution

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