Features
- Electrically screened to SMD# 5962-98533
- QML qualified per MIL-PRF-38535 requirements
- Radiation environment
- High dose rate (50-300rad(Si)/s): 100krad(Si)
- Low dose rate (0.01rad(Si)/s): 50krad(Si)
- Low noise
- At 1kHz: 4.3nV√Hz (typical)
- At 1kHz: 0.6pA√Hz (typical)
- Low offset voltage: 2.1mV (maximum)
- High slew rate: 1.7V/μs (minimum)
- Gain bandwidth product: 8.0MHz (typical)
Description
Support is limited to customers who have already adopted these products.
The HS-OP470ARH is a radiation hardened, monolithic quad operational amplifier that provides highly reliable performance in harsh radiation environments. Excellent noise characteristics coupled with a unique array of dynamic specifications make these amplifiers well-suited for a variety of satellite system applications. Dielectrically isolated, bipolar processing makes these devices immune to single-event latch-up. The HS-OP470ARH shows almost no change in offset voltage after exposure to 100krad(Si) gamma radiation, with only a minor increase in current. Complementing these specifications is a post-radiation open-loop gain in excess of 40kV/V. This quad operational amplifier is available in an industry-standard pinout, allowing for immediate interchangeability with most other quad operational amplifiers.
Applications
- High Q, active filters
- Voltage regulators
- Integrators
- Signal generators
- Voltage references
- Space environments
| Part Number | Status | Samples | Stock | RoHS | Package | Lead Count (#) | Carrier Type | Moisture Sensitivity Level (MSL) | DLA SMD | Pb (Lead) Free | Pb Free Category | MOQ | Temp. Range (°C) | CAGE code |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| HS0-OP470ARH-Q | Obsolete | N/A | Out of Stock | RoHS:EN RoHS:JA | DIE | 5962-98533 | No | 100 | -55 to +125°C | 34371 | ||||
| HS9-OP470ARH-Q | Obsolete | N/A | Out of Stock | Contact | CFP | 14# | Tray | Not Applicable | 5962-98533 | Exempt | Gold Plate over compliant Undercoat-e4 | 25 | -55 to +125°C | 34371 |
| HS9-OP470ARH/PROTO | Obsolete | N/A | Out of Stock | Contact | CFP | 14# | Tray | Not Applicable | Exempt | Gold Plate over compliant Undercoat-e4 | 1 | -55 to +125°C | 34371 |
Filters
Applied Filters
- ReportPDF 689 KB r34st0006eu0100-hs-op470arh-aeh-see-test-report Dec 12, 2019
- Application NotePDF 263 KB r13an0003eu0100-biasing-op-amps Dec 06, 2019AI-generated Summary: Proper biasing of operational amplifiers is essential to avoid malfunction in AC-coupled circuits. A missing DC bias path causes long stabilization times and potential failures. Adding input resistors to ground provides a DC path for bias currents, minimizing offset errors. For single-supply AC-coupled amplifiers, biasing uses a reference voltage, ideally from a high-PSRR voltage reference or buffered voltage divider, to maintain signal symmetry and reduce noise. Understanding frequency responses of input and feedback components is crucial for setting bandwidth and gain characteristics.
- End Of Life NoticePDF 238 KB PLC17051 Oct 31, 2017
- Product AdvisoryPDF 83 KB PA14004 Jan 30, 2014
- Product AdvisoryPDF 499 KB PA11003 Jan 05, 2011
- Product Change NoticePDF 230 KB PCN10123 Dec 06, 2010
- Application NotePDF 338 KB an9867 Nov 10, 1999AI-generated Summary: Electrical parameters are monitored during life testing to detect drift and failures, defined by exceeding datasheet limits. New products require less than 1% failure during burn-in, with failure analysis and corrective actions if exceeded. Sampling plans ensure defect rates below 3%. Life tests last 1000-3000 hours at 125°C depending on process maturity. Failure mechanisms include electromigration, ionic contamination, hot carrier injection, and dielectric rupture. Product sign-off requires all parties' approval after reliability confirmation. Space products undergo burn-in and quality conformance inspections with strict failure limits. Derating is unnecessary as datasheet limits are set at 6-sigma from characterization data, ensuring reliability.
- Application NotePDF 224 KB an9654 May 05, 1999AI-generated Summary: The document explains the reliability and failure mechanisms of semiconductor parts, focusing on life testing and wearout. It discusses how switching states cause transient current pulses and hot carrier injection, which only occur briefly during switching. Life testing at elevated temperatures accelerates aging to remove infant mortality failures, improving reliability. The failure rate follows a bathtub curve with infant mortality, useful life, and wearout phases, modeled by lognormal and exponential distributions. The Arrhenius equation relates failure rates at different temperatures. Burn-in and life tests reduce early failures without harming intrinsic reliability.
Recommended Documents (2)
Datasheets (1)
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- Application NotePDF 263 KB r13an0003eu0100-biasing-op-amps Dec 06, 2019AI-generated Summary: Proper biasing of operational amplifiers is essential to avoid malfunction in AC-coupled circuits. A missing DC bias path causes long stabilization times and potential failures. Adding input resistors to ground provides a DC path for bias currents, minimizing offset errors. For single-supply AC-coupled amplifiers, biasing uses a reference voltage, ideally from a high-PSRR voltage reference or buffered voltage divider, to maintain signal symmetry and reduce noise. Understanding frequency responses of input and feedback components is crucial for setting bandwidth and gain characteristics.
- Application NotePDF 338 KB an9867 Nov 10, 1999AI-generated Summary: Electrical parameters are monitored during life testing to detect drift and failures, defined by exceeding datasheet limits. New products require less than 1% failure during burn-in, with failure analysis and corrective actions if exceeded. Sampling plans ensure defect rates below 3%. Life tests last 1000-3000 hours at 125°C depending on process maturity. Failure mechanisms include electromigration, ionic contamination, hot carrier injection, and dielectric rupture. Product sign-off requires all parties' approval after reliability confirmation. Space products undergo burn-in and quality conformance inspections with strict failure limits. Derating is unnecessary as datasheet limits are set at 6-sigma from characterization data, ensuring reliability.
- Application NotePDF 224 KB an9654 May 05, 1999AI-generated Summary: The document explains the reliability and failure mechanisms of semiconductor parts, focusing on life testing and wearout. It discusses how switching states cause transient current pulses and hot carrier injection, which only occur briefly during switching. Life testing at elevated temperatures accelerates aging to remove infant mortality failures, improving reliability. The failure rate follows a bathtub curve with infant mortality, useful life, and wearout phases, modeled by lognormal and exponential distributions. The Arrhenius equation relates failure rates at different temperatures. Burn-in and life tests reduce early failures without harming intrinsic reliability.
Application Notes & White Papers (3)
- End Of Life NoticePDF 238 KB PLC17051 Oct 31, 2017
- Product AdvisoryPDF 83 KB PA14004 Jan 30, 2014
- Product AdvisoryPDF 499 KB PA11003 Jan 05, 2011
- Product Change NoticePDF 230 KB PCN10123 Dec 06, 2010
Product Notices (PCN, EOL, etc) (4)
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Marketing Collateral (1)
- ReportPDF 689 KB r34st0006eu0100-hs-op470arh-aeh-see-test-report Dec 12, 2019
Other (3)
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Renesas Boards & Kits
Radiation Hardened, Very-Low Noise Quad Operational Amplifier Evaluation Board
The HS-OP470ARHEV1Z evaluation platform is designed to evaluate the HS-OP470ARH radiation hardened, monolithic quad operational amplifier. The evaluation board contains all the circuitry needed to critique the performance of the HS-OP470ARH amplifier. The HS-OP470ARH provides highly reliable... Read More