Features
- Electrically screened to SMD # 5962-95626
- QML qualified per MIL-PRF-38535 requirements
- 1.2 micron radiation hardened bulk CMOS
- Total dose 300 krad(Si) (Max)
- Transient output upset >5 x 108 rad(Si)/s
- LET >100 MEV-cm2/mg
- Fast access time 35ns (Typ)
- Single 5V power supply
- Single pulse 10V field programmable
- Synchronous operation
- On-chip address latches
- Three-state outputs
- NiCr fuses
- Low standby current <500µA (Pre-Rad)
- Low operating current <15mA/MHz
- Military temperature range -55 °C to 125 °C
Description
The Intersil HS-6664RH is a radiation hardened 64K CMOS PROM, organized in an 8K word by 8-bit format. The chip is manufactured using a radiation hardened CMOS process, and utilizes synchronous circuit design techniques to achieve high-speed performance with very low power dissipation. On-chip address latches are provided, allowing easy interfacing with microprocessors that use a multiplexed address/data bus structure. The output enable control simplifies system interfacing by allowing output data bus control in addition to the chip enable control. All bits are manufactured storing a logical 0 and can be selectively programmed for a logical 1 at any bit location. Applications for the HS-6664RH CMOS PROM include low-power microprocessor-based instrumentation and communications systems, remote data acquisition and processing systems, and processor control storage. Specifications for Rad Hard QML devices are controlled by the Defense Supply Center in Columbus (DSCC). The SMD numbers listed here must be used when ordering. Detailed Electrical Specifications for these devices are contained in SMD 5962-95626.
| Part Number | Status | Samples | Stock | Package | Lead Count (#) | Carrier Type | Moisture Sensitivity Level (MSL) | Pitch (mm) | Pkg. Dimensions (mm) | DLA SMD | Pb (Lead) Free | Pb Free Category | MOQ | Temp. Range (°C) | CAGE code |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| HS1-6664RH-8 | Obsolete | N/A | Out of Stock | SBDIP | 28# | Tube | Not Applicable | 2.5mm | 35.6 x 15.1 x 2.41 | 5962F9562601QXC | Exempt | Gold Plate over compliant Undercoat-e4 | 25 | -55 to +125°C | 34371 |
| HS1-6664RH-Q | Obsolete | N/A | Out of Stock | SBDIP | 28# | Tube | Not Applicable | 2.5mm | 35.6 x 15.1 x 2.41 | 5962F9562601VXC | Exempt | Gold Plate over compliant Undercoat-e4 | 25 | -55 to +125°C | 34371 |
| HS1-6664RH/PROTO | Obsolete | N/A | Out of Stock | SBDIP | 28# | Tube | Not Applicable | 2.5mm | 35.6 x 15.1 x 2.41 | Exempt | Gold Plate over compliant Undercoat-e4 | 1 | -55 to +125°C | 34371 | |
| HS9-6664RH-8 | Obsolete | N/A | Out of Stock | CFP | 28# | Tray | Not Applicable | 1.3mm | 18.3 x 12.7 x 0.00 | 5962F9562601QYC | Exempt | Gold Plate over compliant Undercoat-e4 | 25 | -55 to +125°C | 34371 |
| HS9-6664RH-Q | Obsolete | N/A | Out of Stock | CFP | 28# | Tray | Not Applicable | 1.3mm | 18.3 x 12.7 x 0.00 | 5962F9562601VYC | Exempt | Gold Plate over compliant Undercoat-e4 | 25 | -55 to +125°C | 34371 |
| HS9-6664RH/PROTO | Obsolete | N/A | Out of Stock | CFP | 28# | Tray | Not Applicable | 1.3mm | 18.3 x 12.7 x 0.00 | Exempt | Gold Plate over compliant Undercoat-e4 | 1 | -55 to +125°C | 34371 |
Filters
Applied Filters
- Price Increase NoticePDF 360 KB PIN19011 Apr 10, 2019
- Product AdvisoryPDF 220 KB PA18025 Oct 05, 2018
- Product AdvisoryPDF 499 KB PA11003 Jan 05, 2011
- Product Change NoticePDF 230 KB PCN10123 Dec 06, 2010
- Product Change NoticePDF 36 KB PCN08050B Oct 22, 2010
- Application NotePDF 224 KB an9654 May 05, 1999AI-generated Summary: The document explains the reliability and failure mechanisms of semiconductor parts, focusing on life testing and wearout. It discusses how switching states cause transient current pulses and hot carrier injection, which only occur briefly during switching. Life testing at elevated temperatures accelerates aging to remove infant mortality failures, improving reliability. The failure rate follows a bathtub curve with infant mortality, useful life, and wearout phases, modeled by lognormal and exponential distributions. The Arrhenius equation relates failure rates at different temperatures. Burn-in and life tests reduce early failures without harming intrinsic reliability.
- Application NotePDF 377 KB an9522 Mar 02, 1995AI-generated Summary: The report details radiation characterization of the HS-6664RH 64K CMOS PROM across neutron, total dose, dose-rate, and heavy ion single-event environments. Neutron exposure up to 1014/cm2 shows no significant functional degradation or access time increase. Total dose testing up to 1.5M rads(Si) confirms device reliability with minor parametric shifts and no failures. Dose-rate testing reveals transient output upset thresholds at 5x108 rad(Si)/sec and no latch-up up to 5x1011 rad(Si)/sec. Heavy ion testing demonstrates immunity to single event upsets and latch-up up to LET of 116 MEV, validating the hardened design of sense amps and data latches.
Recommended Documents (1)
Datasheets (1)
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- Application NotePDF 224 KB an9654 May 05, 1999AI-generated Summary: The document explains the reliability and failure mechanisms of semiconductor parts, focusing on life testing and wearout. It discusses how switching states cause transient current pulses and hot carrier injection, which only occur briefly during switching. Life testing at elevated temperatures accelerates aging to remove infant mortality failures, improving reliability. The failure rate follows a bathtub curve with infant mortality, useful life, and wearout phases, modeled by lognormal and exponential distributions. The Arrhenius equation relates failure rates at different temperatures. Burn-in and life tests reduce early failures without harming intrinsic reliability.
- Application NotePDF 377 KB an9522 Mar 02, 1995AI-generated Summary: The report details radiation characterization of the HS-6664RH 64K CMOS PROM across neutron, total dose, dose-rate, and heavy ion single-event environments. Neutron exposure up to 1014/cm2 shows no significant functional degradation or access time increase. Total dose testing up to 1.5M rads(Si) confirms device reliability with minor parametric shifts and no failures. Dose-rate testing reveals transient output upset thresholds at 5x108 rad(Si)/sec and no latch-up up to 5x1011 rad(Si)/sec. Heavy ion testing demonstrates immunity to single event upsets and latch-up up to LET of 116 MEV, validating the hardened design of sense amps and data latches.
Application Notes & White Papers (2)
- Price Increase NoticePDF 360 KB PIN19011 Apr 10, 2019
- Product AdvisoryPDF 220 KB PA18025 Oct 05, 2018
- Product AdvisoryPDF 499 KB PA11003 Jan 05, 2011
- Product Change NoticePDF 230 KB PCN10123 Dec 06, 2010
- Product Change NoticePDF 36 KB PCN08050B Oct 22, 2010
Product Notices (PCN, EOL, etc) (5)
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Support Communities
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PROM
Hello,I want to know about a PROM, its model number is HS-6664RH. I would like to know the programming operation of this memory because I did not find the operation of data writing in the datasheet. Thank you!
Feb 21, 2022