Features
- Extremely Small 350mA DC/DC Converter
- Max Height 1.1mm 10 Ld MSOP Package
- Possibly Uses Only Five Tiny External Components with Fixed Output
- Power-On-Reset Output (POR)
- Internally-Compensated Voltage Mode Controller
- Up to 94% Efficiency
- <1µA Shut-Down Current
- Overcurrent and Over-Temperature Protection
- Pb-free Available (RoHS compliant)
EL7535 Functional Diagram
Description
The EL7535 is a synchronous, integrated FET 350mA step-down regulator in a 10 Ld MSOP package. The regulator is internally compensated, which makes it possible to use just five tiny external components to form a complete DC/DC converter. The regulator operates with an input voltage range from 2.5V to 6V, which accommodates supplies of 3.3V, 5V, or a Li-ion battery source. The output can be externally set from 0.8V to VIN with a resistive divider. The EL7535 features PWM mode control. The operating frequency is typically 1.4MHz. Additional features include <1µA shut-down current, short-circuit protection, and over-temperature protection. The EL7535 is available in the 10 Ld MSOP package and is specified for operation over the full -40°C to +85°C temperature range.
Applications
- PDA and Pocket PC Computers
- Bar Code Readers
- Cellular Phones
- Portable Test Equipment
- Li-Ion Battery Powered Devices
- Small Form Factor (SFP) Modules
| Part Number | Status | Samples | Stock | RoHS | Package | Carrier Type | MOQ |
|---|---|---|---|---|---|---|---|
| EL7535IYZ | Obsolete | N/A | In Stock | RoHS:EN | MSOP | Tube | 1000 |
| EL7535IYZ-T13 | Obsolete | N/A | Out of Stock | RoHS:EN | MSOP | Reel | 2500 |
| EL7535IYZ-T7 | Obsolete | N/A | In Stock | RoHS:EN | MSOP | Reel | 1500 |
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- Application NotePDF 592 KB an9208 Feb 01, 2018AI-generated Summary: The document discusses high frequency power converters, focusing on ZVS-QRC and multi-resonant topologies that reduce switching losses by operating switches at zero voltage. It highlights challenges like EMI and high voltage stress. The SEPIC converter is introduced, explaining its ability to buck or boost voltage without polarity inversion. The document details SEPIC’s operating modes, voltage-current relationships, and the importance of inductor values for continuous or discontinuous conduction modes.
- Product Change NoticePDF 117 KB PCN11059 Jun 17, 2011
- Application NotePDF 397 KB an1684 Jan 19, 2004AI-generated Summary: The document outlines important legal disclaimers and usage guidelines for semiconductor products. It emphasizes user responsibility for product design and safety, disclaims liability for damages, and clarifies no intellectual property licenses are granted. Products are categorized by quality grades with specific application recommendations. Users must comply with laws, avoid unauthorized modifications, and ensure safe use within specified conditions. Contact details for Renesas Electronics sales offices worldwide are provided.
- Application NotePDF 509 KB an1681 Jan 19, 2004AI-generated Summary: The document explains grounding techniques for PCB layouts using a dual op amp example on a single-layer copper board. It compares three grounding schemes: a center spine ground trace, an outer ground plane, and a split/star ground plane, highlighting the benefits of single-point grounding to minimize noise and antenna effects. It emphasizes following current paths, minimizing loop lengths, and ensuring close forward and return paths to reduce interference. The document also includes disclaimers on product use, quality grades, safety, and legal compliance.
- Application NotePDF 650 KB an9210 Dec 21, 2001AI-generated Summary: This document presents a new PSPICE subcircuit model for power MOSFETs with global temperature options. It details synchronous rectifier circuit operation, including gate biasing and conduction modes. The model accurately simulates switching waveforms, diode recovery, and temperature-dependent efficiency. Measured and modeled data show excellent correlation for output characteristics, threshold voltage, breakdown voltage, and on-resistance across temperature ranges. Limitations in linear mode modeling are noted due to PSPICE assumptions.
- Application NotePDF 387 KB an9209 Aug 13, 1998AI-generated Summary: The document presents an empirical SPICE-2 subcircuit model for power MOSFETs, accurately simulating static and dynamic behaviors including first and third-quadrant operations and avalanche breakdown. The model aligns closely with measured data and is compatible with all SPICE versions without code modification. It uses parameters derived from datasheets or simple measurements. The document also includes detailed comparisons of measured and calculated curves for transfer, output, switching, and diode recovery characteristics. Additionally, it provides legal and usage disclaimers from Renesas Electronics.
- Application NotePDF 349 KB an7244 Aug 12, 1998AI-generated Summary: Power MOSFETs feature a positive temperature coefficient of resistance, enhancing stability and preventing thermal runaway by increasing resistance as temperature rises. Their gate terminals have extremely high input impedance with minimal leakage current, dominated by capacitive characteristics. Switching speed depends on gate resistance and capacitance, with polysilicon gates offering higher resistance and lower frequency operation than metal gates. MOSFETs require a gate-to-source voltage exceeding a threshold (around 2V) and typically about 10V to fully saturate and deliver maximum drain current. TTL and CMOS drivers differ in voltage capability and switching speed, often requiring buffering for optimal performance.
Recommended Documents (1)
Datasheets (1)
Manuals & Guides (1)
- Application NotePDF 592 KB an9208 Feb 01, 2018AI-generated Summary: The document discusses high frequency power converters, focusing on ZVS-QRC and multi-resonant topologies that reduce switching losses by operating switches at zero voltage. It highlights challenges like EMI and high voltage stress. The SEPIC converter is introduced, explaining its ability to buck or boost voltage without polarity inversion. The document details SEPIC’s operating modes, voltage-current relationships, and the importance of inductor values for continuous or discontinuous conduction modes.
- Application NotePDF 397 KB an1684 Jan 19, 2004AI-generated Summary: The document outlines important legal disclaimers and usage guidelines for semiconductor products. It emphasizes user responsibility for product design and safety, disclaims liability for damages, and clarifies no intellectual property licenses are granted. Products are categorized by quality grades with specific application recommendations. Users must comply with laws, avoid unauthorized modifications, and ensure safe use within specified conditions. Contact details for Renesas Electronics sales offices worldwide are provided.
- Application NotePDF 509 KB an1681 Jan 19, 2004AI-generated Summary: The document explains grounding techniques for PCB layouts using a dual op amp example on a single-layer copper board. It compares three grounding schemes: a center spine ground trace, an outer ground plane, and a split/star ground plane, highlighting the benefits of single-point grounding to minimize noise and antenna effects. It emphasizes following current paths, minimizing loop lengths, and ensuring close forward and return paths to reduce interference. The document also includes disclaimers on product use, quality grades, safety, and legal compliance.
- Application NotePDF 650 KB an9210 Dec 21, 2001AI-generated Summary: This document presents a new PSPICE subcircuit model for power MOSFETs with global temperature options. It details synchronous rectifier circuit operation, including gate biasing and conduction modes. The model accurately simulates switching waveforms, diode recovery, and temperature-dependent efficiency. Measured and modeled data show excellent correlation for output characteristics, threshold voltage, breakdown voltage, and on-resistance across temperature ranges. Limitations in linear mode modeling are noted due to PSPICE assumptions.
- Application NotePDF 387 KB an9209 Aug 13, 1998AI-generated Summary: The document presents an empirical SPICE-2 subcircuit model for power MOSFETs, accurately simulating static and dynamic behaviors including first and third-quadrant operations and avalanche breakdown. The model aligns closely with measured data and is compatible with all SPICE versions without code modification. It uses parameters derived from datasheets or simple measurements. The document also includes detailed comparisons of measured and calculated curves for transfer, output, switching, and diode recovery characteristics. Additionally, it provides legal and usage disclaimers from Renesas Electronics.View More (6)
Application Notes & White Papers (6)
- Product Change NoticePDF 117 KB PCN11059 Jun 17, 2011
Product Notices (PCN, EOL, etc) (3)
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Renesas Boards & Kits
EL7535IY-EVAL
Active
Synchronous Step-Down PWM Regulator Evaluation Board
The EL7535 is a high-efficiency, 350mA synchronous step-down PWM regulator in a tiny 10 Ld MSOP package. The internal compensation makes it possible for these full-featured converters to occupy less than 0.18in2 of PCB area with all components on one side.
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