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Automotive Power MOSFETs

Using wafer processing with the latest trench technology and packaging with multi-wire/clip bonding technology, we offer a lineup of products suitable for automotive specifications with low resistance and high-speed switching characteristics.

As environmental regulations and energy policies regarding fuel efficiency and exhaust gas progress around the world, electric vehicles (HEV/EV) continue to spread as they improve their "environmental and energy-saving" and "safety and convenience.'' With the spread of these next-generation vehicles, demand for high-performance, high-efficiency, and high-functional power devices is increasing. In order to meet these needs, Renesas has provided products that achieve high quality and reliability through design, development, and process management for automotive applications. We are currently developing new processes and products to bring products with even higher performance, reliability, and functionality to the market.

Automotive Low Voltage Power MOSFET Process Trends

Low ON-resistance is the most important characteristic for power MOSFETs used in automotive electronics to control high-current drive in high-temperature environments. In recent years, switching characteristics have also become more important given the expansion of PWM and power supply applications. Guided by current technological trends, we are developing high-performance processes that feature ultra-low on-resistance and low gate capacitance. 

PolarityVDSS(V)ID≦50(A)50<ID≦100(A)100(A)<ID 
Nch>100V   
81V to 100V  View Products
61V to 80V   
41V to 60VView ProductsView ProductsView Products
20V to 40VView ProductsView ProductsView Products
PolarityVDSS(V)ID≧-50(A)-50>ID≧-100(A)
Pch-20V to -40VView ProductsView Products
-41V to -60VView ProductsView Products

Product Selector: Automotive Power MOSFETs

Explore our catalog of products through our parametric product selector tool. Compare specifications across various parameters to find the right part for your design.

Product Selector
Type Title Date
Application Note PDF 596 KB
Compares the thermal performance of automotive power MOSFETs in the TOLL (TO-Leadless) package and its derivatives, including the TOLT (TO-Leaded Top-side Cooling) package. The information presented in this document is intended to serve as a comprehensive guideline for designing high-power automotive systems.
Application Note PDF 309 KB 日本語
AI-generated Summary: Parallel connection of power MOSFETs requires careful management of current balance to prevent device damage. During conduction, differences in RDS(on) and wiring resistance cause current imbalance, which can be mitigated by selecting devices from the same lot and symmetrical layout design. During switching, variations in VGS(th) and inductance lead to transient current imbalance, necessitating similar countermeasures. Avalanche operation risks concentrating current on weaker devices. Parasitic oscillations occur more frequently in parallel configurations due to resonant circuits formed by gate and drain inductances and capacitances, which can be suppressed by adding gate resistors.
Application Note PDF 3.23 MB 日本語
AI-generated Summary: Absolute maximum ratings define safe operational limits for MOSFETs, including voltage, current, and temperature thresholds to prevent device damage. Electrical characteristics specify parameters like breakdown voltage, threshold voltage, on-resistance, capacitances, and switching times. Allowable channel dissipation decreases as case temperature rises, calculated by a specific formula. The safe operating area (SOA) outlines five limiting conditions: current rating, on-resistance, channel dissipation, secondary breakdown, and voltage rating, ensuring reliable MOSFET operation under various conditions.
Application Note PDF 648 KB 日本語
AI-generated Summary: The document outlines derating standards for Power MOSFETs and IGBTs, emphasizing temperature, humidity, voltage, current, and power limits to ensure device reliability. It discusses package type selection between hermetic sealed and plastic molded types, highlighting the advantages of surface-mount packages for miniaturization. It also details precautions for physical handling, including proper lead forming, cutting, and mounting techniques to prevent stress and damage during installation.
Application Note PDF 585 KB 日本語
AI-generated Summary: The document outlines avalanche operation and failure mechanisms of power MOSFETs, detailing two failure modes: current failure and energy failure. It explains measurement waveforms during avalanche events and methods to apply destructive and rated avalanche breakdown values. The guide covers derating avalanche capability based on channel temperature and distinguishes single pulse from repetitive pulse operations. It also includes procedures for avalanche testing and safe operation judgment using waveform analysis and temperature calculations.
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