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Renesas Electronics Corporation

Features

  • High-speed access and chip select times – 25/35ns (max.)
  • Low-power consumption
  • Battery backup operation – 2V data retention voltage
  • Produced with advanced CMOS high-performance technology
  • CMOS process virtually eliminates alpha particle soft-error rates
  • Input and output directly TTL-compatible
  • Static operation: no clocks or refresh required
  • Available in 24-pin (300 mil) ceramic DIP package
  • Military product compliant to MIL-STD-833, Class B

Description

The 5962-88740 (6116 SRAM) is organized as 2K x 8. This part offers a reduced power standby mode.This low-power version also offers a battery backup data retention capability where the circuit typically consumes only 1µW to 4µW operating off a 2V battery. All inputs and outputs are TTL-compatible. Fully static asynchronous circuitry is used, requiring no clocks or refreshing for operation.

Part NumberStatusSamplesStockPackageLead Count (#)Temp. GradePb (Lead) FreeCarrier Type
5962-8874001LAObsoleteN/AOut of StockCDIP24#MNoTube
5962-8874002LAObsoleteN/AOut of StockCDIP24#MNoTube
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