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Features

  • Directly driven by a 4.0 V power source.
  • Low on-state resistance RDS(on)1 = 105 mΩ MAX. (VGS = 10 V, ID = 2.0 A) RDS(on)2 = 150 mΩ MAX. (VGS = 4.0 V, ID = 2.0 A)

Description

Support is limited to customers who have already adopted these products.

The 2SK2857C, N-channel vertical type MOSFET designed for general-purpose switch, is a device which can be driven directly by a 4. 0 V power source.

Part NumberStatusSamplesStockRoHSPackageLead Count (#)Moisture Sensitivity Level (MSL)Pb (Lead) Free
2SK2857C-T1-AZObsoleteN/AOut of StockRoHS:EN
RoHS:JA
POMM3#1Yes
2SK2857C(0)-T1-AYObsoleteN/AOut of StockRoHS:EN
RoHS:JA
POMM3#1Yes
2SK2857C(0)-T1-AZObsoleteN/AOut of StockRoHS:EN
RoHS:JA
POMM3#1Yes
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