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2SK1058

Obsolete

N Channel MOSFET

Features

  • High speed switching
  • Wide area of safe operation
  • Enhancement-mode
  • Good complementary characteristics
  • Equipped with gate protection diodes
  • Suitable for audio power amplifier
Find Other Products in Power MOSFETs

Description

Low frequency power amplifier, Complementary pair with 2SJ160, 2SJ161 and 2SJ162.

Part NumberStatusSamplesStockPackageLead Count (#)Carrier TypePb (Lead) Free
2SK1058-EObsoleteN/AOut of StockTO-3P3#TubeYes
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    Recommended Documents (1)

  1. Datasheet
    2SK1056 2SK1057 2SK1058 Datasheet
    RECOMMENDED
    PDF 85 KB REJ03G0906-0200 Rev.2.00 日本語 Sep 07, 2005

    Datasheets (1)

  1. Datasheet
    2SK1056 2SK1057 2SK1058 Datasheet
    RECOMMENDED
    PDF 85 KB REJ03G0906-0200 Rev.2.00 日本語 Sep 07, 2005

    Manuals & Guides (1)

  1. Guide
    Recommended Mounting Pad for Renesas Power MOSFETs
    PDF 988 KB R07ZZ0016EJ0100 Rev.1.00 Dec 03, 2025
    The diagrams in this document show the recommended mounting pad layout dimensions for Renesas Power MOSFETs. In actual PCB design, optimization should consider mounting density, mountability, dimensional tolerances, and other relevant factors.

    Application Notes & White Papers (3)

  1. Application Note
    Power MOSFETs TOLL and TOLT Comparison of Thermal Performance
    PDF 596 KB R07AN0051EJ0100 Rev.1.00 Apr 27, 2026
    Compares the thermal performance of automotive power MOSFETs in the TOLL (TO-Leadless) package and its derivatives, including the TOLT (TO-Leaded Top-side Cooling) package. The information presented in this document is intended to serve as a comprehensive guideline for designing high-power automotive systems.
  2. Application Note
    Power MOSFETs: How Does the Frequency Affect Capacitance Measurement?
    PDF 936 KB R07AN0050EJ0100 Rev.1.00 Dec 03, 2025
    Measurement frequency and the influence of parasitic inductance are crucial in capacitance measurements for Power MOSFETs. Split-gate structures, with their low Crss and higher Ciss, face challenges from parasitic inductance, making high-frequency measurements difficult. In contrast, standard-gate trench structures allow relatively accurate results. The influence of parasitic inductance in actual measurements is examined from various perspectives.
  3. Application Note
    Attention of Handling Semiconductor Devices
    PDF 648 KB R07ZZ0010EJ0602 Rev.6.02 日本語 Apr 16, 2021
    AI-generated Summary: The document outlines derating standards for Power MOSFETs and IGBTs, emphasizing temperature, humidity, voltage, current, and power limits to ensure device reliability. It discusses package type selection between hermetic sealed and plastic molded types, highlighting the advantages of surface-mount packages for miniaturization. It also details precautions for physical handling, including proper lead forming, cutting, and mounting techniques to prevent stress and damage during installation.

    Errata & Technical Updates (1)

  1. Technical Update
    PCN of Marking for Power Transistors
    PDF 92 KB TN-PTR-A001A/E 日本語 Jan 15, 2008
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Support Communities

  1. Rookie For 2SK1058 & 2SJ162

    ... I would like to ask if I can directly use the existing three 12AX7B and two 7025 electron tubes instead of 6N11 and 6n6? Tips: 2sk1058 and J162: 1. https://www.utmel.com/components/2sk1058-n-channel-power-mosfet-2sk1058-datasheet-pinout?id=1047 2.https ...

    Dec 27, 2021
  2. MOSFET 2SK1058 and 2SJ162

    I have amplifiers using MOSFET 2sk1058 and 2sj162 both of which have become obsolete. Are there other lateral MOSFETs that can be used to replace them or do we simply have to throw these amplifiers away. Which is the current best high power MOSFET design?

    Oct 13, 2025
  3. MOSFET TRANSISTORS FOR AUDIO AMP

    Good day,   I build audio amplifiers all my life and use POWER MOSFETS  2SJ162 AND 2SK1058 but battle to get them.  Do RENESAS still make them. I bought MOSFET from a supplier in CHINA but they were FAKE transistors. Please help

    Jul 11, 2018
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