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Renesas Electronics Corporation

Features

  • Low on-state resistance:
    RDS(on)1 = 31 mΩ MAX. (VGS = –10 V, ID = –18 A)
    RDS(on)2 = 46 mΩ MAX. (V/GS = –4.0 V, ID = –18 A)
  • Low input capacitance:
    Ciss = 3300 pF TYP. (VDS = –10 V, VGS = 0 V)
  • Built-in gate protection diode
  • TO-251/TO-252 package

Description

The 2SJ601 is P-channel MOS Field Effect Transistor designed for solenoid, motor and lamp driver.

Part NumberStatusSamplesStockPackageLead Count (#)Carrier TypeMoisture Sensitivity Level (MSL)Pb (Lead) Free
2SJ601-ZK-E1-AYObsoleteN/AOut of StockMP-3ZK3#Embossed Tape1Yes
2SJ601-ZK-E1-AZNRNDAvailableIn StockMP-3ZK3#Embossed Tape1Yes
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