Radiation Hardened Low Side GaN FET Driver
Jump to Page Section:
Back to top
Explore ECAD Models
Overview
Description
The ISL70040SEH and ISL73040SEH are low-side drivers designed to drive enhancement mode Gallium Nitride (GaN) FETs in isolated topologies and boost type configurations. The ISL70040SEH operates with a supply voltage from 4. 5V to 13. 2V and has both inverting (INB) and non-inverting (IN) inputs to satisfy requirements for inverting and non-inverting gate drives with a single device. The ISL70040SEH and ISL73040SEH have a 4. 5V gate drive voltage (VDRV) generated using an internal regulator which prevents the gate voltage from exceeding the maximum gate-source rating of enhancement mode GaN FETs. The gate drive voltage also features an undervoltage lockout (UVLO) protection that ignores the inputs (IN/INB) and keeps OUTL turned on to ensure the GaN FET is in an OFF state whenever VDRV is below the UVLO threshold. The ISL70040SEH and ISL73040SEH inputs can withstand voltages up to 14. 7V regardless of the VDD voltage. This allows the ISL70040SEH and ISL73040SEH inputs to be connected directly to most PWM controllers. The ISL70040SEH and ISL73040SEH split outputs offer the flexibility to adjust the turn-on and turn-off speed independently by adding additional impedance to the turn-on/off paths. The ISL70040SEH and ISL73040SEH operate across the military temperature range from -55°C to +125°C and are offered in an 8 Ld hermetically sealed ceramic Surface Mount Device (SMD) package or die form.
Features
- Wide operating voltage range of 4.5V to 13.2V
- Up to 14.7V logic inputs (regardless of VDD level)
- Inverting and non-inverting inputs
- Optimized to drive enhancement mode GaN FETs
- Internal 4.5V regulated gate drive voltage
- Independent outputs for adjustable turn-on/turn-off speeds
- Full military temperature range operation
- TA = -55°C to +125°C
- TJ = -55°C to +150°C
- Radiation hardness assurance (wafer-by-wafer)
- High Dose Rate (HDR) (50-300rad(Si)/s): 100krad(Si) (ISL70040SEH only)
- Low Dose Rate (LDR) (0.01rad(Si)/s): 75krad(Si)
- SEE hardness (refer to the ISL70040SEH, ISL73040SEH SEE Report for details)
- No SEB/L LETTH, VDD = 14.7V: 86MeV•cm2/mg
- No SET, LETTH, VDD = 13.2V: 86MeV•cm2/mg
- Electrically screened to DLA SMD 5962-17233
Design & Development
Software & Tools
Software & Tools
| Title | Type | Company |
|---|---|---|
| iSim:PE Offline Simulation TooliSim Personal Edition (iSim:PE) speeds the design cycle and reduces risk early in any project, identifying parts that can be used in current as well as next-generation designs.Downloads: | Simulator | Renesas |
Boards & Kits
Boards & Kits
Evaluation Board for the ISL70040SEH and ISL70023SEH (100V GaN FET)
The ISL70040SEHEV2Z evaluation platform is designed to evaluate the ISL70040SEH radiation hardened low-side GaN FET driver alongside the ISL70023SEH and ISL70024SEH enhancement mode GaN power transistors.
The ISL70040SEH is designed to drive enhancement mode Gallium Nitride (GaN) FETs in isolated topologies and boost type configurations.
Featured Documents:
Evaluation Board for the ISL70040SEH and ISL70024SEH (200V GaN FET)
The ISL70040SEHEV3Z evaluation platform is designed to evaluate the ISL70040SEH radiation hardened low side GaN FET driver alongside the ISL70023SEH and ISL70024SEH enhancement mode GaN power transistors.
The ISL70040SEH is designed to drive enhancement mode Gallium Nitride (GaN) FETs in isolated topologies and boost type configurations.
Featured Documents:
Evaluation Board for ISL73040SEH and ISL73024SEH in a 200V Half-bridge Configuration
The ISL73040SEHEV4Z evaluation board demonstrates how to build a half bridge power stage with the ISL73040SEH low-side GaN driver and the ISL73024SEH 200V GaN FET. The ISL73040SEH has a 4.5V gate drive voltage (VDRV) generated using an internal regulator that prevents the gate voltage from exceeding the maximum gate-source rating of the ISL73024SEH GaN FET. The ISL73024SEH is a 200V GaN FET capable of 7.5A drain current.
Featured Documents:
Evaluation Board for the ISL70040SEH and ISL70020SEH (40V GaN FET)
The ISL70040SEHEV5Z evaluation platform is designed to evaluate the ISL70040SEH alongside the ISL70020SEH. The ISL70040SEH is designed to drive enhancement mode Gallium Nitride (GaN) FETs in isolated topologies and boost type configurations. The board operates across a supply range of 4.5V to 13.2V and offers both non-inverting and inverting inputs to satisfy non-inverting and inverting gate drive within a single device.
Featured Documents:
Models
ECAD Models
Schematic symbols, PCB footprints, and 3D CAD models from SamacSys can be found by clicking on products in the Product Options table. If a symbol or model isn't available, it can be requested directly from the website.
Product Options