The HS-303CEH is an analog switch and a monolithic device that is fabricated using the Renesas dielectrically isolated Radiation Hardened Silicon Gate (RSG) process technology to ensure latch-up free operation. The HS-303CEH is pinout compatible and functionally equivalent to the HS-303RH. The HS-303CEH offers low-resistance switching performance for analog voltages up to the supply rails. ON-resistance is low and stays reasonably constant across the full range of operating voltage and current. ON-resistance also stays reasonably constant when exposed to radiation. Break-before-make switching is controlled by 5V digital inputs. The HS-303CEH can operate with ±15V rails. Specifications See SMD 5962-95813 for detailed electrical specifications.


  • Electrically screened to DLA SMD# 5962-95813
  • QML, per MIL-PRF-38535
  • No latch-up, dielectrically isolated device islands
  • Pinout and functionally compatible with the HS-303RH series of analog switches
  • Analog signal range equal to the supply voltage range
  • Low leakage : 150nA (max, post-rad)
  • Low rON : 60Ω (max, post-rad)
  • Low standby supply current : ±150µA (max, post-rad)
  • Radiation assurance
    • High dose rate (50 to 300rad(Si)/s) : 100krad(Si)
    • Low dose rate (0.01rad(Si)/s) : 50krad(Si) (Note 1)
  • Single event effects
    • For LET = 60MeV·cm2/mg at 60° incident angle, <150pC charge transferred to the output of an off switch (based on SOI design calculations)




Type Title Date
Datasheet PDF 511 KB
Brochure PDF 467 KB
Brochure PDF 4.85 MB
Technical Brief PDF 115 KB
Price Increase Notice PDF 360 KB
Report PDF 305 KB
White Paper PDF 533 KB
Application Note PDF 338 KB
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Design & Development