Overview

Description

MOSFETs suitable for switching (motor drive, etc.) and load switch applications. Low on-resistance, high-speed switching, and high-robustness.

Features

  • High Drain to Source Voltage
    VDSS = 20 V (VGS = 0 V, TA = 25°C)
  • 2.5V drive available
  • Low on-state resistance
    RDS(on)1 = 13.8 mΩ MAX. (VGS = 4.5 V, ID = 3.5 A)
    RDS(on)2 = 19.1 mΩ MAX. (VGS = 2.5 V, ID = 3.5 A)
  • Built-in gate protection diode
  • Lead-free and Halogen-free

Comparison

Applications

Documentation

Type Title Date
Datasheet PDF 239 KB
Application Note PDF 648 KB 日本語
2 items

Design & Development

Models