Overview
Description
The N0604N is N-channel MOS Field Effect Transistor designed for high current switching applications.
Features
- Low on-state resistance
RDS(on) = 6.5 mΩ MAX. (VGS = 10 V, ID = 41 A) - Low input capacitance
Ciss = 4150 pF TYP. (VDS = 25 V, VGS = 0 V) - High current
ID(DC) = ±82 A - RoHS Compliant
Documentation
| Type | Date | |
|---|---|---|
| PDF 5.51 MB 日本語 | Brochure | |
| PDF 648 KB 日本語 | Application Note | |
| PDF 470 KB | Datasheet | |
3 items
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Design & Development
Models
ECAD Models
Schematic symbols, PCB footprints, and 3D CAD models from SamacSys can be found by clicking on products in the Product Options table. If a symbol or model isn't available, it can be requested directly from the website.
Processing table
| TO-220 | TO-220 | Tube | Get Samples, |
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Support
Renesas Samples
Select an orderable part number:
| Orderable Part ID | Sample |
|---|---|
| N0604N-S19-AY | Availability |