Power & Power Management

Overview

Description

The N0601N is N-channel MOS Field Effect Transistor designed for high current switching applications.

Features

  • Low on-state resistance
    RDS(on) = 4.2 mΩ MAX. (VGS = 10 V, ID = 50 A)
  • Low input capacitance
    Ciss = 7730 pF TYP. (VDS = 25 V, VGS = 0 V)
  • High current
    ID(DC) = ±100 A
  • RoHS Compliant

Documentation

Title Type Date
PDF541 KB
Datasheet
PDF3.27 MB日本語
Application Note
PDF648 KB日本語
Application Note

Design & Development

Support