Power & Power Management

Overview

The N0601N is N-channel MOS Field Effect Transistor designed for high current switching applications.

  • Low on-state resistance
    RDS(on) = 4.2 mΩ MAX. (VGS = 10 V, ID = 50 A)
  • Low input capacitance
    Ciss = 7730 pF TYP. (VDS = 25 V, VGS = 0 V)
  • High current
    ID(DC) = ±100 A
  • RoHS Compliant

Documentation

Title
Type Date
N0601N Datasheet
PDF 541 KB 		Datasheet
Industrial Power Management Brochure
PDF 5.51 MB 日本語 		Brochure
Power MOSFET Application Note
PDF 3.23 MB 日本語 		Application Note
Attention of Handling Semiconductor Devices
PDF 648 KB 日本語 		Application Note
4 items

Design & Development

ECAD Models

Schematic symbols, PCB footprints, and 3D CAD models from SamacSys can be found by clicking on products in the Product Options table. If a symbol or model isn't available, it can be requested directly from the website.

Explore ECAD Models
Diagram of ECAD Models

Product Options

    Processing table
    Pkg. Type
    Standard Pkg. Type
    Carrier Type
    Buy / Sample
    Part Number
    N0601N-ZK-E1-AY
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    Samples Available
    		 MP-25ZK TO-263 / D2PAK Embossed Tape Get Samples,
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    Renesas Samples

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    Orderable Part ID Sample
    N0601N-ZK-E1-AY
    Availability
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