The N0601N is N-channel MOS Field Effect Transistor designed for high current switching applications.

Features

  • Low on-state resistance
    RDS(on) = 4.2 mΩ MAX. (VGS = 10 V, ID = 50 A)
  • Low input capacitance
    Ciss = 7730 pF TYP. (VDS = 25 V, VGS = 0 V)
  • High current
    ID(DC) = ±100 A
  • RoHS Compliant

Product Options

Part Number Part Status Pkg. Type Carrier Type Buy Sample
N0601N-ZK-E1-AY
Active
Availability

Documentation & Downloads

Title Other Languages Type Format File Size Date
Datasheets & Errata
N0601N Datasheet Datasheet PDF 541 KB