Renesas Electronics Corporation
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N0601N

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Nch Power MOSFET 60V 100A 4.2mohm TO-263 / D2PAK

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N0601N Datasheet

Overview

The N0601N is N-channel MOS Field Effect Transistor designed for high current switching applications.

  • Low on-state resistance
    RDS(on) = 4.2 mΩ MAX. (VGS = 10 V, ID = 50 A)
  • Low input capacitance
    Ciss = 7730 pF TYP. (VDS = 25 V, VGS = 0 V)
  • High current
    ID(DC) = ±100 A
  • RoHS Compliant

Documentation

Featured Documentation
Type Title Date
Datasheet
N0601N Datasheet
PDF 541 KB
Guide
Power Discrete Mount Pad
PDF 796 KB
Application Note
Power MOSFET Application Note
PDF 3.23 MB 日本語
Application Note
Attention of Handling Semiconductor Devices
PDF 648 KB 日本語
4 items

Design & Development

ECAD Models

Schematic symbols, PCB footprints, and 3D CAD models from SamacSys can be found by clicking on the CAD Model links in the Product Options table. If a symbol or model isn't available, it can be requested directly from SamacSys.

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Diagram of ECAD Models

Models
Type Title Date
Model - SPICE
N0601N SPICE Data
LIB 2 KB
1 item

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