This product is N-channel MOS Field Effect Transistors designed for high current switching applications.
Features
- Super low on-state resistance
RDS(on) = 3.3 mΩ MAX. ( VGS = 10 V, ID = 45 A ) - Low Ciss : Ciss = 3900 pF TYP. ( VDS = 25 V )
This product is N-channel MOS Field Effect Transistors designed for high current switching applications.
| Title | Other Languages | Type | Format | File Size | Date | |
|---|---|---|---|---|---|---|
| Datasheets & Errata | ||||||
| N0439N Datasheet | – | Datasheet | 582 KB | |||
| Application Notes & White Papers | ||||||
| Attention of Handling Semiconductor Devices | 日本語 | Application Note | 648 KB | |||