Overview

Description

The N0412N is N-channel MOS Field Effect Transistor designed for high current switching applications.

Features

  • Low on-state resistance
    RDS(on) = 3.7 mΩ MAX. (VGS = 10 V, ID = 50 A)
  • Low input capacitance
    Ciss = 5550 pF TYP. (VDS = 25 V, VGS = 0 V)
  • High current
    ID(DC) = ±100 A
  • RoHS Compliant

Documentation

Type Date
PDF 478 KB Datasheet
PDF 5.51 MB 日本語 Brochure
PDF 648 KB 日本語 Application Note
3 items

Design & Development

Models

Support