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Low on-state resistance:
RDS(on)1 = 31 mΩ MAX. (VGS = –10 V, ID = –18 A)
RDS(on)2 = 46 mΩ MAX. (V/GS = –4.0 V, ID = –18 A) Low input capacitance:
Ciss = 3300 pF TYP. (VDS = –10 V, VGS = 0 V) Built-in gate protection diode TO-251/TO-252 package
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Overview
Description
The 2SJ601 is P-channel MOS Field Effect Transistor designed for solenoid, motor and lamp driver.
Features
RDS(on)1 = 31 mΩ MAX. (VGS = –10 V, ID = –18 A)
RDS(on)2 = 46 mΩ MAX. (V/GS = –4.0 V, ID = –18 A)
Ciss = 3300 pF TYP. (VDS = –10 V, VGS = 0 V)
Design & Development
ECAD Models
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