The M1008204 series is a 8Mbit high performance non-volatile MRAM with speed up to 108MHz. The M1008204 offers superior reliability and greater than 20-year data retention (at 85°C). It does not require backup battery or capacitor(s) compared to non-volatile SRAM. The M1008204 supports Quad SPI, SDR and DDR interface. It operates at 1.8V typical from -40°C to +105°C (industrial plus version) and offered in an SOIC or DFN (WSON) package.
|Document title||Document type Type||Date Date|
|PDF 1.00 MB||Datasheet|
|PDF 98 KB||Application Note|
|PDF 1.26 MB||Overview|
|PDF 315 KB||Product Advisory|
PA# : 210007 Updated Endurance and Electrical Characteristics for High Performance Serial MRAM Memory DatasheetPDF 201 KB
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Renesas’ high performance serial and parallel MRAM memory family provides the largest range of SPI and parallel interface non-volatile memory sizes, with fast read and write speeds. The MRAM family is ideal for applications ranging from factory automation equipment requiring fast back-up data retrieval to medical data units with long-term data storage requirements.