The NP35N04YLG is N-channel MOS Field Effect Transistor designed for high current switching applications.


  • Low on-state resistance RDS(on) = 9.7 mΩ MAX. (VGS = 10 V, ID = 17.5 A) RDS(on) = 15 mΩ MAX. (VGS = 5 V, ID = 17.5 A)
  • Logic level drive type
  • Gate to Source ESD protection diode built in
  • Designed for automotive application and AEC-Q101 qualified

Product Options

Part Number Part Status Pkg. Type Carrier Type Buy Sample
Active HSON Embossed Tape
Active HSON Embossed Tape

Documentation & Downloads

Title language Type Format File Size Date
Datasheets & Errata
NP35N04YLG Data Sheet Datasheet PDF 208 KB
User Guides & Manuals
Power Devices Part Number Guide Guide PDF 1.89 MB
PowerMOSFET & IPD Brochure PDF 2.24 MB