Overview

Description

The NP35N04YLG is N-channel MOS Field Effect Transistor designed for high current switching applications.

Features

  • Low on-state resistance RDS(on) = 9.7 mΩ MAX. (VGS = 10 V, ID = 17.5 A) RDS(on) = 15 mΩ MAX. (VGS = 5 V, ID = 17.5 A)
  • Logic level drive type
  • Gate to Source ESD protection diode built in
  • Designed for automotive application and AEC-Q101 qualified

Documentation

Type Date
PDF 208 KB Datasheet
PDF 3.23 MB 日本語 Application Note
PDF 1.71 MB Guide
PDF 223 KB Product Reliability Report
PDF 2.24 MB Brochure
5 items

Design & Development

Models

Support