Overview

Description

The NP35N04YLG is N-channel MOS Field Effect Transistor designed for high current switching applications.

Features

  • Low on-state resistance RDS(on) = 9.7 mΩ MAX. (VGS = 10 V, ID = 17.5 A) RDS(on) = 15 mΩ MAX. (VGS = 5 V, ID = 17.5 A)
  • Logic level drive type
  • Gate to Source ESD protection diode built in
  • Designed for automotive application and AEC-Q101 qualified

Documentation

Document title Document type Type Date Date
PDF 208 KB Datasheet
PDF 3.23 MB 日本語 Application Note
PDF 2.24 MB Brochure
PDF 1.71 MB Guide
PDF 223 KB Product Reliability Report
5 items

Design & Development

Models

Support