Overview

Description

The R1RP0416DI Series is a 4-Mbit High-Speed static RAM organized 256-k word × 16-bit. It has realized High-Speed access time by employing CMOS process (6-transistor memory cell) and High-Speed circuit designing technology. It is most appropriate for the application which requires High-Speed, high density memory and wide bit width configuration, such as cache and buffer memory in system. It is packaged in 400-mil 44-pin plastic SOJ and 400-mil 44-pin plastic TSOPII.

Features

  • Single 5.0 V supply: 5.0 V ± 10 %
  • Access time: 10ns /12ns (max)
  • Completely static memory: No clock or timing strobe required
  • Equal access and cycle times
  • Directly TTL compatible: All inputs and outputs
  • Operating current: 170mA/160mA (max)
  • TTL standby current: 40 mA (max)
  • CMOS standby current: 5 mA (max)
  • Center VCC and VSS type pin out
  • Temperature range: ?40 to +85°C

Comparison

Applications

Documentation

Design & Development

Models