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ルネサス エレクトロニクス株式会社 (Renesas Electronics Corporation)

特長

  • VDSS = 20 V (TA = 25°C)
  • Low on-state resistance
    RDS(on) = 4.3 mΩ MAX. (VGS = 8.0 V, ID = 13.5 A)
  • 2.5 V Gate-drive available
  • Small & thin type surface mount package with heat spreader
  • Pb-free and Halogen free

説明

MOSFETs suitable for switching (motor drive, etc.) and load switch applications. Low on-resistance, high-speed switching, and high-robustness.

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