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ルネサス エレクトロニクス株式会社 (Renesas Electronics Corporation)
Wide Temperature Range Version 4M High-Speed SRAM (256-kword × 16-bit)

パッケージ情報

CADモデル:View CAD Model
Pkg. Type:TSOP(44)
Pkg. Code:pkg_11787
Lead Count (#):44
Pkg. Dimensions (mm):18 x 10 x 1.2
Pitch (mm):0.8

環境及び輸出分類情報

Moisture Sensitivity Level (MSL)3
RoHS (R1RP0416DSB-2PI#D1)英語日本語
Pb (Lead) FreeYes
ECCN (US)
HTS (US)

製品スペック

Carrier TypeTray
Moisture Sensitivity Level (MSL)3
Country of AssemblyMALAYSIA, TAIWAN
Country of Wafer FabricationJAPAN
Access Time (ns)12
Bus Width (bits)16
Core Voltage (V)5V
Density (Kb)4096
I/O Voltage (V)5
Lead CompliantYes
Lead Count (#)44
Length (mm)18
Longevity2032 12月
MOQ1
Memory Capacity (kbit)4000
Organization256K x 16
Organization (bit)x 16
Pb (Lead) FreeYes
Pkg. Dimensions (mm)18 x 10 x 1.2
Pkg. TypeTSOP(44)
Price (USD)$4.24017
Replacement RemarkBack-end site & assembly material change
Supply Voltage (V)4.5 - 5.5
Tape & ReelNo
Thickness (mm)1.2
Width (mm)10

説明

The R1RP0416DI is a 4Mbit high-speed static RAM organized as 256-kword × 16-bit. It realizes high-speed access time by employing the CMOS process (6-transistor memory cell) and high-speed circuit design technology. It is most appropriate for applications that require high-speed, high-density memory and a wide bit width configuration, such as cache and buffer memory in systems. It is packaged in 400-mil 44-pin plastic SOJ and 400-mil 44-pin plastic TSOPII.