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ルネサス エレクトロニクス株式会社 (Renesas Electronics Corporation)
144-Mbit DDR™II+ SRAM 2-word Burst Architecture ( 2.5 Cycle Read latency ) with ODT

パッケージ情報

CADモデル:View CAD Model
Pkg. Type:LBGA
Pkg. Code:pkg_9995
Lead Count (#):165
Pkg. Dimensions (mm):17 x 15 x 1.4
Pitch (mm):

環境及び輸出分類情報

RoHS (R1QEA4436RBG-18IB0)英語日本語
Pb (Lead) Free
Moisture Sensitivity Level (MSL)
ECCN (US)
HTS (US)

製品スペック

Pkg. TypeLBGA
Carrier TypeTray
ArchitectureDDR-II+ CIO with ODT
Burst Length (Words)2
Data Width (bits)36000
Density (Kb)144000
Frequency (Max) (MHz)550
Lead CompliantNo
Lead Count (#)165
Length (mm)17
MIN Frequency (MHz)250
Pkg. Dimensions (mm)17 x 15 x 1.4
Read Latency (Clock)2.5
Tape & ReelNo
Thickness (mm)1.4
Width (mm)15

説明

The R1QEA4436RBG is a 4, 194, 304-word by 36-bit and the R1QEA4418RBG is a 8, 388, 608-word by 18-bit synchronous double data rate static RAM fabricated with advanced CMOS technology using full CMOS six-transistor memory cell. It integrates unique synchronous peripheral circuitry and a burst counter. All input registers are controlled by an input clock pair (K and /K) and are latched on the positive edge of K and /K. These products are suitable for applications which require synchronous operation, High-Speed, low voltage, high density and wide bit configuration. These products are packaged in 165-pin plastic FBGA package.