特長
- Super low on-state resistance RDS(on) = 2.8 mΩ MAX. (VGS = 10 V, ID = 45 A)
- Low Ciss: Ciss = 4700 pF TYP. (VDS = 25 V)
- Designed for automotive application and AEC-Q101 qualified
説明
Support is limited to customers who have already adopted these products.
These products are N-channel MOS Field Effect Transistors designed for high current switching applications.
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