特長
- Low on-state resistance
RDS(on) = 4.6 mΩ MAX. (VGS = 10 V, ID = 50 A) - Low input capacitance
Ciss = 7730 pF TYP. (VDS = 25 V, VGS = 0 V) - High current
ID(DC) = ±100 A - RoHS Compliant
説明
The N0602N is N-channel MOS Field Effect Transistor designed for high current switching applications.
パラメータ
| 属性 | 値 |
|---|---|
| Qualification Level | Industrial |
| Nch/Pch | Nch |
| Channels (#) | 1 |
| Standard Pkg. Type | TO-220 |
| Simulation Model Available | Yes |
| VDSS (Max) (V) | 60 |
| ID (A) | 100 |
| RDS (ON) (Max) @10V or 8V (mohm) | 4.6 |
| Pch (W) | 156 |
| Vgs (off) (Max) (V) | 4 |
| VGSS (V) | 20 |
| Ciss (Typical) (pF) | 7730 |
| Qg typ (nC) | 133 |
| Mounting Type | Through Hole |
パッケージオプション
| Pkg. Type | Lead Count (#) |
|---|---|
| TO-220 | 3 |
適用されたフィルター
読込中