メインコンテンツに移動
ルネサス エレクトロニクス株式会社 (Renesas Electronics Corporation)
Radiation Hardened 9A, Non-Inverting Power MOSFET Drivers

パッケージ情報

CADモデル:View CAD Model
Pkg. Type:DIE
Pkg. Code:
Lead Count (#):
Pkg. Dimensions (mm):
Pitch (mm):

環境及び輸出分類情報

Moisture Sensitivity Level (MSL)
Pb (Lead) FreeNo
ECCN (US)EAR99
HTS (US)8542.39.0090
RoHS (ISL74422ARHVX)英語日本語

製品スペック

Pkg. TypeDIE
Qualification LevelClass V
DLA SMD5962F0152101V9A
Pb (Lead) FreeNo
MOQ100
Temp. Range (°C)-55 to +125°C
CAGE code34371
Channels (#)1
DSEE (MeV·cm2/mg)DSEE Free (DI)
Die Sale Availability?Yes
Driver TypeLow Side
Drivers (#)1
FET TypeMOSFET
Fall Time90
FlowRH Hermetic
Input VCC (Max) (V)18
Input VCC (Min) (V)7
Lead CompliantNo
Low Side Fall Time (max) (ns)90
Low Side Rise Time (max) (ns)105
Output TypeNon-inverting
PROTO Availability?Yes
Peak Output Current IPK (A)9
Peak Output Sink Current (A)9
Peak Output Source Current (A)9
RatingSpace
Rise Time (Max)105
SMD URL5962-01521
TID HDR (krad(Si))300
Tape & ReelNo

説明

The Radiation Hardened ISL74422ARH is a non-inverting, monolithic high-speed MOSFET driver designed to convert a CMOS level input signal into a high current output at voltages up to 18V. Its fast rise times and high current output allow very quick control of even the largest power MOSFETs in high frequency applications. The input of the ISL74422ARH can be directly driven by our HS-1825ARH and IS-1845ASRH PWM devices. The 9A high current output minimizes power losses in MOSFETs by rapidly charging and discharging high gate capacitances. Constructed with the Intersil dielectrically isolated Rad Hard Silicon Gate (RSG) BiCMOS process, these devices are immune to Single Event Latch-up and have been specifically designed to provide highly reliable performance in harsh radiation environments. Specifications for Rad Hard QML devices are controlled by the Defense Supply Center in Columbus (DSCC). The SMD numbers listed here must be used when ordering. Detailed Electrical Specifications for these devices are contained in SMD 5962-01521.