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ルネサス エレクトロニクス株式会社 (Renesas Electronics Corporation)
Radiation Hardened High Frequency Half Bridge Drivers

パッケージ情報

CADモデル:View CAD Model
Pkg. Type:DIE
Pkg. Code:
Lead Count (#):
Pkg. Dimensions (mm):
Pitch (mm):

環境及び輸出分類情報

Moisture Sensitivity Level (MSL)
Pb (Lead) FreeNo
ECCN (US)EAR99
HTS (US)8542.39.0090
RoHS (IS0-2100ARH-Q)英語日本語

製品スペック

Pkg. TypeDIE
Qualification LevelClass V
DLA SMD5962F9953602V9A
Pb (Lead) FreeNo
MOQ100
Temp. Range (°C)-55 to +125°C
CAGE code34371
Bus Voltage (Max) (V)130
DSEE (MeV·cm2/mg)90
Die Sale Availability?Yes
Driver TypeHalf Bridge
Drivers (#)1
FET TypeMOSFET
Fall Time60
FlowRH Hermetic
High Side Fall Time (max) (ns)40
High Side Rise Time (max) (ns)40
Input VCC (Max) (V)20
Input VCC (Min) (V)12
Lead CompliantNo
Low Side Fall Time (max) (ns)40
Low Side Rise Time (max) (ns)40
Output TypeSynchronous
PROTO Availability?Yes
Peak Output Current IPK (A)1.5
Peak Output Sink Current (A)1.5
Peak Output Source Current (A)1.5
RatingSpace
Rise Time (Max)60
SMD URL5962-99536
TID HDR (krad(Si))300
Tape & ReelNo

説明

The radiation hardened IS-2100ARH, IS-2100AEH are high-frequency, 130V half-bridge N-Channel MOSFET driver ICs, which are functionally similar to industry-standard 2110 types. The low-side and high-side gate drivers are independently controlled. This gives the user maximum flexibility in dead time selection and driver protocol. In addition, the devices have on-chip error detection and correction circuitry, which monitors the state of the high-side latch and compares it to the HIN signal. If they disagree, a set or reset pulse is generated to correct the high-side latch. This feature protects the high-side latch from single event upsets (SEUs).