メインコンテンツに移動
Dual, Noninverting Power MOSFET Radiation Hardened Drivers

パッケージ情報

CADモデル:View CAD Model
Pkg. Type:DIE
Pkg. Code:
Lead Count (#):
Pkg. Dimensions (mm):
Pitch (mm):

環境及び輸出分類情報

Moisture Sensitivity Level (MSL)
Pb (Lead) FreeNo
ECCN (US)9A515.e.1
HTS (US)8542.39.0090
RoHS (HS0-4424DEH-Q)英語日本語

製品スペック

Pkg. TypeDIE
DLA SMD5962F9956006V9A
Pb (Lead) FreeNo
MOQ100
Temp. Range (°C)-55 to +125°C
CAGE code34371
DSEE (MeV·cm2/mg)60
Die Sale Availability?Yes
Driver TypeLow Side
Drivers (#)2
FET TypeMOSFET
Fall Time75
FlowRH Hermetic
Input VCC (Max) (V)18
Input VCC (Min) (V)8
Lead CompliantNo
Low Side Fall Time (max) (ns)75
Low Side Rise Time (max) (ns)75
Output TypeNon-inverting
PROTO Availability?Yes
Peak Output Current IPK (A)2
Peak Output Sink Current (A)2
Peak Output Source Current (A)2
Qualification LevelClass V
RatingSpace
Rise Time (Max)75
SMD URL5962-99560
TID HDR (krad(Si))300
TID LDR (krad(Si))50
Tape & ReelNo

説明

The radiation hardened HS-4424 family are noninverting, dual, monolithic high-speed MOSFET drivers designed to convert low voltage control input signals into higher voltage, high current outputs. The HS-4424DRH, HS-4424DEH are fully tested across the 8V to 18V operating range. The inputs of these devices can be directly driven by the HS-1825ARH PWM device or by our ACS/ACTS and HCS/HCTS type logic devices. The fast rise times and high current outputs allow very quick control of high gate capacitance power MOSFETs in high-frequency applications. The high current outputs minimize power losses in MOSFETs by rapidly charging and discharging the gate capacitance. The output stage incorporates a low voltage lockout circuit that puts the outputs into a three-state mode when the supply voltage is below its Undervoltage Lockout (UVLO) threshold voltage. Constructed with Intersil’s dielectrically isolated Rad Hard Silicon Gate (RSG) BiCMOS process, these devices are immune to single event latch-up and have been specifically designed to provide highly reliable performance in harsh radiation environments.