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ルネサス エレクトロニクス株式会社 (Renesas Electronics Corporation)
Ultra High Frequency Matched Pair Transistors

パッケージ情報

CADモデル:View CAD Model
Pkg. Type:SOT23
Pkg. Code:PDB
Lead Count (#):6
Pkg. Dimensions (mm):2.9 x 1.7 x 0.00
Pitch (mm):1

環境及び輸出分類情報

Moisture Sensitivity Level (MSL)2
Pb (Lead) FreeYes
ECCN (US)EAR99
HTS (US)8541.29.0040
RoHS (HFA3135IHZ96)ダウンロード

製品スペック

Lead Count (#)6
Carrier TypeReel
Moisture Sensitivity Level (MSL)2
Pb (Lead) FreeYes
Pb Free CategoryPb-Free 100% Matte Tin Plate w/Anneal-e3
Temp. Range (°C)-40 to +85°C
Country of AssemblyMALAYSIA
Country of Wafer FabricationUSA
CCB (pF)0.4
CEB (pF)0.55
Channels (#)2
FT (GHz)7
ICBO (nA)5
ICEO (nA)5
Length (mm)2.9
MOQ3000
NF (dB)4.6
NPN or PNPPNP
Offset Voltage (Max) (mV)6
Pitch (mm)1
Pkg. Dimensions (mm)2.9 x 1.7 x 0.00
Pkg. TypeSOT23
Price (USD)$6.1375
Qualification LevelStandard
V (BR) CBO (V)21
V (BR) CEO (V)14
V (BR) EBO (V)5
Width (mm)1.7
hFE57

説明

The HFA3134 and HFA3135 are Ultra High Frequency Transistor pairs that are fabricated with Intersil Corporation's complementary bipolar UHF-1X process. The NPN transistors exhibit an fT of 8. 5GHz, while the PNP transistors have an fT of 7GHz. Both types exhibit low noise, making them ideal for high frequency amplifier and mixer applications. Both arrays are matched high frequency transistor pairs. The matching simplifies DC bias problems and it minimizes imbalances in differential amplifier configurations. Their high fT enables the design of UHF amplifiers which exhibit exceptional stability.