特長
- Low on-resistance
RDS(on) = 2.6 mΩ typ. - Low drive current
- 4.5 V gate drive device can be driven from 5 V source
説明
MOSFETs suitable for switching (motor drive, etc.) and load switch applications. Low on-resistance, high-speed switching, and high-robustness.
適用されたフィルター