メインコンテンツに移動
ルネサス エレクトロニクス株式会社 (Renesas Electronics Corporation)
3.3V 256K x 36 ZBT Synchronous 3.3V I/O Flow-Through SRAM

パッケージ情報

CADモデル:View CAD Model
Pkg. Type:PBGA
Pkg. Code:BG119
Lead Count (#):119
Pkg. Dimensions (mm):14.0 x 22.0 x 2.15
Pitch (mm):1.27

環境及び輸出分類情報

Pb (Lead) FreeNo
Moisture Sensitivity Level (MSL)3
ECCN (US)3A991.b.2.a
HTS (US)8542.32.0041

製品スペック

Lead Count (#)119
Pb (Lead) FreeNo
Carrier TypeReel
Moisture Sensitivity Level (MSL)3
ArchitectureZBT
Bus Width (bits)36
Core Voltage (V)3.3
Cycle Time (ns)85
Density (Kb)9216
I/O Voltage (V)2.5 - 2.5
Length (mm)14
MOQ1000
Organization256K x 36
Output TypeFlowthrough
Package Area (mm²)308
Pb Free Categorye0
Pitch (mm)1.27
Pkg. Dimensions (mm)14.0 x 22.0 x 2.15
Pkg. TypePBGA
Qty. per Carrier (#)0
Qty. per Reel (#)1000
Reel Size (in)13
Requires Terms and ConditionsDoes not require acceptance of Terms and Conditions
Tape & ReelYes
Temp. Range (°C)0 to 70°C
Thickness (mm)2.15
Width (mm)22

説明

The 71V65703 3.3V CMOS SRAM, organized as 256K x 36, is designed to eliminate dead bus cycles when turning the bus around between reads and writes or writes and reads. Thus it has been given the name ZBT™, or Zero Bus Turnaround. The 71V65703 contains address, data-in, and control signal registers. The outputs are flow-through (no output data register). In the burst mode, it can provide four cycles of data for a single address presented to the SRAM.